2N3906 Spec Sheet

2N3906 Spec Sheet - Microdot may be in either location). Web product specification transistor 2n3906 features pinning low current (max. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: 200 ma) low voltage (max. Silicon epitaxial planar npn transistor. Web pnp general purpose amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma.

Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Silicon epitaxial planar npn transistor. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. 200 ma) low voltage (max. Web product specification transistor 2n3906 features pinning low current (max. Web pnp general purpose amplifier. Microdot may be in either location).

Web pnp general purpose amplifier. 200 ma) low voltage (max. Silicon epitaxial planar npn transistor. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Microdot may be in either location). Web product specification transistor 2n3906 features pinning low current (max.

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200 Ma) Low Voltage (Max.

Silicon epitaxial planar npn transistor. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Web pnp general purpose amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma.

Microdot May Be In Either Location).

Web product specification transistor 2n3906 features pinning low current (max.

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